Atomic layer deposition apparatus

An atomic layer deposition apparatus for processing substrates according to principles of atomic layer deposition, the apparatus comprising:

• a vacuum chamber,
• a deposition chamber within the vacuum chamber,
• an inlet channel extending from the vacuum chamber to the deposition chamber such that the inlet channel is connected to the deposition chamber for supplying gases to the deposition chamber,
• a discharge channel extending from the deposition chamber to outside of the vacuum chamber for discharging gases from the deposition chamber,
• one or more first precursor supply sources connected to the inlet channel, and
• one or more second precursor supply sources connected to the inlet channel, the vacuum chamber is arranged between the one or more first precursor supply sources and the one or more second precursor supply sources,
• a first side compartment and a second side compartment such that the vacuum chamber is arranged between the first and second side compartments, the one or more first precursor supply sources are arranged inside the first side compartment, and the one or more second precursor supply sources are arranged inside the second side compartment, and
• a lower compartment connected to the vacuum chamber such that the vacuum chamber is arranged above the lower compartment and the inlet channel is arranged to extend from the lower compartment to the deposition chamber arranged inside the vacuum chamber.