Process for thin film deposition through controlled formation of vapor phase transient species

A method for deposition of a cobalt-based thin film onto a substrate surface, the method comprising:

• providing a deposition chamber containing a substrate;
• providing a synthesis chamber which is distinct from but connected to the deposition chamber;
• connecting the synthesis chamber to the deposition chamber with a vacuum interlock or valving system;
• providing a cobalt source precursor to the synthesis chamber;
• maintaining the working pressure in the synthesis chamber in the range of 5 to 150 ton;
• generating a cobalt-containing vapor phase transient species from the source precursor in the synthesis chamber;
• wherein the vapor phase transient species is generated independently from the substrate surface;
• wherein the temperature of the synthesis chamber during generation of the vapor phase transient species is maintained at a temperature of about 150° C. to about 250° C.;
• controlling a concentration or partial pressure of the vapor phase transient species in the synthesis chamber using a vacuum, inert gas, or a stabilizing gas to prevent self-reaction of the transient species;
• (a) maintaining the partial pressure of the vapor phase transient species at 5 to 50 Torr and maintaining the substrate at a temperature of about 100° C. to about 400° C.;
• or
• (b) maintaining the partial pressure of the vapor phase transient species at 5 to 20 Torr and maintaining the substrate at a temperature of about 100° C. to about 500° C.;
• and
• delivering the vapor phase transient species to the deposition chamber, wherein the vapor phase transient species decomposes to form a cobalt-based thin film on the substrate.