Anti-corrosion conductive film and pulse bias alternation-based magnetron sputtering deposition method and application thereof

A pulse bias alternation-based magnetron sputtering deposition method for making an anti-corrosion conductive film, comprising

• sequentially forming an anti-corrosion protective layer, a stress transition layer, and a conducting layer on a surface of a substrate by deposition through a high-low pulse bias alternation method;
• inhibiting columnar structures growth to reduce contact resistance in the anti-corrosion conductive film by the high-low pulse bias alternation method, wherein
• the high-low pulse bias alternation method comprises multiple high-low bias alternations;
• the anti-corrosion conductive film comprises carbon,
• each of the multiple high-low bias alternations follows a step function and is implemented by applying a low pulse bias, the low pulse bias to carry out deposition for a deposition time TL at a low bias supply frequency, and then applying a high pulse bias, the high pulse bias to carry out deposition for a deposition time TH at a high bias supply frequency, the high pulse bias has an absolute value larger than that of the low pulse bias,
• in the process of forming the stress transition layer by deposition, the absolute value of the high pulse bias is increased gradually from one high-low bias alternation to another, and
• in the process of forming the stress transition layer by deposition, a bias value of the low pulse bias is −30V to −200V, a bias value of the high pulse bias is −200V to −800V, the number of the high-low bias alternations is 2-10, and the deposition time of the high pulse bias and the deposition time of the low pulse bias meets TH:
• TL=1:2-1:5.