Composition for etching

A semiconductor element comprising:

• a cell gate structure formed on a substrate on which a plurality of interlayer insulating layers and a plurality of gate electrode layers are alternatively stacked, wherein the cell gate structure formed by selectively etching a plurality of nitride layers by a composition for the selective etching,
• wherein the composition for etching comprises:
• a first inorganic acid,
• a first silane compound,
• a silane inorganic acid salt produced by reaction between a second inorganic acid and a second silane compound;
• and
• a solvent,
• wherein:
• the second inorganic acid is at least one selected from the group consisting of a phosphoric acid, an anhydrous phosphoric acid, a pyrophosphoric acid, a polyphosphoric acid, and a combination thereof;
• and
• each the first silane compound and the second silane compound is independently a compound selected from Chemical Formulas A1, A2, and their combination,
• the silane inorganic acid salt is represented by Chemical Formula C11,
• (In Chemical Formula A1 and Chemical Formula A2, each R1 to R10 is independently selected from a group consisting of hydrogen, halogen, (C1-C10) alkyl, (C1-C10) alkoxy, and (C6-C30) aryl, at least one of R1 to R10 is hydrogen, or (C1-C10) alkoxy, and n is one of integer numbers from 1 to 10,)
• (In Chemical Formula C11, each R111 to R112 is independently selected from a group consisting of hydrogen, halogen, (C1-C10) alkyl, (C1-C10) alkoxy, and (C6-C30) aryl, each R113 to R122 is independently hydrogen, and each o1, o21, o22 and o3 is independently one of integer numbers from 0 to 10, n4 is one of integer numbers from 0 to 2, l1 is one of integer numbers from 0 to 10, m1 is 0 or 1.).