Quantum dots, production method thereof, and composite and electronic device including the same

A quantum dot, comprising

• a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core,
• wherein the quantum dot does not comprise cadmium,
• the core comprises a Group III-V compound comprising a group III metal and a group V element,
• the quantum dot has a maximum photoluminescence peak in a green light wavelength region,
• a full width at half maximum of the maximum photoluminescence peak is less than about 50 nanometers, and
• a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to 23 nanometers, and wherein the quantum dot further comprises an additive comprising Sn, Bi, or a combination thereof.

A quantum dot, comprising

• a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core,
• wherein the quantum dot does not comprise cadmium,
• the core comprises a Group III-V compound comprising a group III metal and a group V element,
• the quantum dot has a maximum photoluminescence peak in a green light wavelength region,
• a full width at half maximum of the maximum photoluminescence peak is less than about 50 nanometers, and
• a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to 23 nanometers,
• wherein the shell comprises
• a first semiconductor nanocrystal shell comprising zinc and selenium and
• a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell comprising zinc and sulfur, and
• wherein the second semiconductor nanocrystal shell has a thickness of less than 0.7 nanometers.