MEMs using outgassing material to adjust the pressure level in a cavity

A method for fabricating a semiconductor structure, comprising:

• providing a device substrate, wherein the device substrate comprises a first region and a second region different from the first region;
• forming an outgassing material in the first region;
• forming an outgassing barrier layer over the outgassing material;
• after forming the outgassing barrier layer, partially removing a portion of the outgassing material to expose a sidewall of the outgas sing material;
• removing the outgassing barrier layer subsequent to removing the portion of the outgassing material;
• and
• bonding the device substrate to a capping substrate to form a first cavity in the first region and a second cavity in the second region.

A method for fabricating a semiconductor structure, comprising:

• forming a passivation layer over a device substrate;
• forming an outgassing material in the passivation layer, wherein at least a portion of the outgassing material is laterally surrounded by the passivation layer;
• partially removing the outgassing material, wherein partially removing the outgassing material comprises:
• forming a plurality of blocks made of the outgassing material;
• bonding the device substrate to a capping substrate to form a first cavity and a second cavity apart from the first cavity, wherein at least a portion of the outgassing material is in the first cavity;
• and
• generating a gas in the first cavity.