External heating system for use in chemical mechanical polishing system
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Sheng Lin, Chi-Hsiang Shen, Chi-Jen Liu, Chun-Wei Hsu, Yang-Chun Cheng, Kei-Wei Chen
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Abstract
A chemical mechanical polishing (CMP) system includes a polishing pad configured to polish a substrate. The CMP system further includes a heating system configured to adjust a temperature of the polishing pad. The heating system comprises at least one heating element spaced apart from the polishing pad. The CMP system further includes a sensor configured to measure the temperature of the polishing pad.
Claims20
A chemical mechanical polishing (CMP) system, comprising:
- a polishing pad configured to polish a substrate;
- a heating system configured to heat the polishing pad, wherein the heating system comprises a plurality of heating elements spaced apart from the polishing pad, the plurality of heating elements positioned on a side of the polishing pad around a perimeter of the polishing pad;
- a sensor configured to measure a temperature of the polishing pad;
- and
- a controller configured to control a location of the plurality of heating elements.
A chemical mechanical polishing (CMP) system, comprising:
- a polishing head configured to hold a substrate during a CMP process;
- a polishing pad configured to polish the substrate;
- a slurry delivery system configured to supply a slurry to the polishing pad;
- a heating system configured to heat at least one of the polishing pad and the slurry, wherein the heating system comprises a plurality of heating elements each of which is spaced apart from the polishing pad by a distance, the plurality of heating elements being arranged in a circular configuration around a perimeter of the polishing pad;
- a sensor configured to measure a temperature of the polishing pad;
- and
- a controller configured to control the plurality of heating elements in the heating system based on information received from the sensor.
A method of controlling a temperature of a chemical mechanical polishing (CMP) process, comprising:
- dispensing a slurry onto a polishing pad;
- polishing a surface of a substrate with the slurry;
- heating the polishing pad as the surface of the substrate is being polished, wherein the polishing pad is being heated through radiant heating using a heating system that is spaced apart from the polishing pad by a distance;
- monitoring a temperature of the polishing pad;
- controlling the temperature of the polishing pad by adjusting the distance between at least one heating element in the heating system and the polishing pad as the surface of the substrate is being polished;
- and
- maintaining the temperature of the polishing pad around a target temperature associated with one or more materials being polished.
Dependencies are inferred from the claim text.