Low temperature polycrystalline semiconductor device and manufacturing method thereof

A semiconductor device manufactured by a method of manufacturing a semiconductor device, the method comprising:

• forming a buffer layer of an insulating material on a substrate;
• forming a seed layer of catalyst material containing Ni on the buffer layer;
• forming, on the buffer layer, an amorphous intrinsic silicon layer for forming a channel;
• forming, on the amorphous intrinsic silicon layer, a non-intrinsic silicon layer for forming a source and/or drain;
• forming a metal layer on the non-intrinsic silicon layer;
• performing metal induced crystallization (MIC) process producing NiSi2 by catalytic reaction of Ni and Si for crystallization of the amorphous intrinsic silicon layer and the amorphous non-intrinsic silicon layer, and activation of the amorphous non-intrinsic silicon layer to form a conductive area, and forming a contact layer by the NiSb being reached between the conductive area and the metal layer while the crystallization is progressed;
• the semiconductor device comprising:
• a substrate;
• a buffer layer formed on the substrate;
• a channel layer formed by an intrinsic polycrystalline silicon layer on the buffer layer;
• polycrystalline source and drain by non-intrinsic silicon formed on both sides of the polycrystalline silicon layer;
• a source electrode and a drain electrode formed on the polycrystalline source and the drain;
• a gate electrode corresponding to the channel layer;
• and
• an NiS2 contact layer located between the source and the source electrode and between the drain and the drain electrode;
• wherein the non-intrinsic polycrystalline source and drain comprise:
• a first non-intrinsic silicon layer contacting both sides of the channel layer;
• and
• a second non-intrinsic silicon layer provided on the first non-intrinsic silicon layer,
• wherein:
• the first non-intrinsic silicon layer further extends toward the gate than the second non-intrinsic silicon layer to form a lightly doped drain (LDD).