Low temperature polycrystalline semiconductor device and manufacturing method thereof
AssigneeYing Hong
InventorYing Hong
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Abstract
A method of manufacturing a semiconductor device includes steps of (i) forming a buffer layer of an insulating material on a substrate, (ii) forming a seed layer of catalyst material containing Ni on the buffer layer, (iii) forming, on the buffer layer, an amorphous intrinsic silicon layer for forming a channel, (iv) forming, on the amorphous intrinsic silicon layer, a non-intrinsic silicon layer for forming a source and/or drain, (v) forming a metal layer on the non-intrinsic silicon layer, and (vi) performing metal induced crystallization (MIC) process for crystallization of the amorphous intrinsic silicon layer and the amorphous non-intrinsic silicon layer, and activation of the amorphous non-intrinsic silicon layer to form a conductive area.
Claims12
A method of manufacturing a semiconductor device, the method comprising:
- forming a buffer layer of an insulating material on a substrate;
- forming a seed layer of catalyst material containing Ni on the buffer layer;
- forming, on the buffer layer, an amorphous intrinsic silicon layer for forming a channel;
- forming, on the amorphous intrinsic silicon layer, an amorphous non-intrinsic silicon layer for forming a source, a drain or both;
- forming a metal layer on the non-intrinsic silicon layer;
- and
- performing metal induced crystallization (MIC) process for crystallization of the amorphous intrinsic silicon layer and the amorphous non-intrinsic silicon layer, and activation of the amorphous non-intrinsic silicon layer to form a conductive area.
Dependencies are inferred from the claim text.