Metalorganic chemical vapor phase deposition apparatus having bubbler with first supply section leading to reactor, first, second and third mass flow controller and pressure sensor

A metalorganic chemical vapor phase epitaxy or vapor phase deposition apparatus comprising:

• a first gas source system;
• a reactor;
• an exhaust gas system;
• and
• a control unit,
• wherein the first gas source system has a carrier gas source, a bubbler with an organometallic starting compound, and a first supply section leading to the reactor either directly or through a first control valve,
• wherein the carrier gas source is connected to an inlet of the bubbler through a first mass flow controller via a second supply section,
• wherein an outlet of the bubbler is connected to the first supply section,
• wherein the carrier gas source is connected to the first supply section through a second mass flow controller via a third supply section,
• wherein the first supply section is connected to an inlet of the reactor through a third mass flow controller downstream after the connection to the outlet of the bubbler and after the connection to the third supply section,
• wherein the first gas source system has a pressure sensor mounted between the first mass flow controller and the third mass flow controller in order to determine the flow in the first gas source system by the first mass flow controller, the second mass flow controller and the third mass flow controller, and
• wherein the first supply section has, parallel to a line section that contains the third mass flow controller and no pressure controller, a line section with a pressure controller and no mass flow controller, wherein either the line section that contains the third mass flow controller or the line section of the first supply section that contains the pressure controller is shut off at a given time.