Electrochemical depositions of ruthenium-containing materials
AssigneeApplied Materials, Inc.
InventorsEric J. Bergman, Robert Mikkola
Life of this patent
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Abstract
Exemplary methods of electroplating may include providing a patterned substrate having at least one opening, where the opening includes one or more sidewalls and a bottom surface. The methods may also include plating a first portion of ruthenium-containing material on the bottom surface of the opening at a first deposition rate and a second portion of ruthenium-containing material on the sidewalls of the opening at a second deposition rate, where the first deposition rate is greater than the second deposition rate. The methods may be used to make integrated circuit devices that include void-free, electrically-conductive lines and columns of ruthenium-containing materials.
Claims19
An electroplating method comprising:
- providing a patterned substrate comprising at least one opening, wherein the opening includes one or more sidewalls and a bottom surface;
- plating a first portion of ruthenium-containing material on the bottom surface of the opening at a first deposition rate and a second portion of ruthenium-containing material on the sidewalls of the opening at a second deposition rate, wherein the first deposition rate is greater than the second deposition rate.
A electroplating method comprising:
- depositing a seed layer in at least one opening formed in a patterned substrate, wherein the opening includes one or more sidewalls and a bottom surface;
- contacting the patterned substrate that includes the seed layer with an electrochemical plating fluid, wherein the electrochemical plating fluid comprises greater than or about 0.1 M ruthenium ions and greater than or about 1×10−5 M bismuth ions;
- and
- applying a current to the patterned substrate that includes the seed layer to plate a first portion of ruthenium-containing material on the bottom surface of the opening at a first deposition rate and a second portion of ruthenium-containing material on the sidewalls of the opening at a second deposition rate, wherein the first deposition rate is greater than the second deposition rate.
Dependencies are inferred from the claim text.