Back to results
US 11,629,407 B2Granted
Substrate processing apparatus and method for processing substrates
AssigneeASM IP Holding B.V.
InventorsDieter Pierreux, Werner Knaepen, Bert Jongbloed, Jeroen Fluit
Life of this patent
Estimating the term…
Abstract
The disclosure relates to a substrate processing apparatus, comprising: a first reactor constructed and arranged to process a rack with a plurality of substrates therein; a second reactor constructed and arranged to process a substrate; and, a substrate transfer device constructed and arranged to transfer substrates to and from the first and second reactor. The second reactor may be provided with an illumination system constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers onto a top surface of at least a substrate in the second reactor.
Claims27
A substrate processing apparatus, comprising:
- a housing;
- a first reactor constructed and arranged to process a rack with a plurality of substrates therein;
- a second reactor constructed and arranged to process a substrate;
- and, a substrate transfer device constructed and arranged to transfer the rack and a plurality of substrates to and from the first and second reactor;
- wherein the second reactor is provided with an illumination system constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers onto a top surface of each of the plurality of substrates in the rack in the second reactor, and
- wherein the illumination system comprises at least three elongated radiation sources spaced about a periphery of the rack when the rack is positioned within the second reactor, each of the elongated radiation sources extending in a direction perpendicular to the top surfaces of the plurality of the substrates and extending over a full length of the rack to illuminate the substrates over the full length of the rack,
- wherein each of the at least three elongated radiation sources is arranged to generate a radiation beam from the side of the rack downward to one of the top surfaces of the plurality of substrates, wherein the average direction of radiation of the radiation beam is at an angle in the range of 80 to 89.5 degrees with respect to a line perpendicular to the top surfaces of the plurality of substrates, and
- wherein the substrate processing apparatus further comprises a power controller configured to control the power of the illumination system, wherein the power controller is programmed to adjust a radiation output of at least one of the at least three elongated radiation sources along the width of the rack.
5 more elements
A substrate processing apparatus, comprising:
- a housing;
- a first reactor constructed and arranged to process a rack with a plurality of substrates therein;
- a second reactor constructed and arranged to receive the rack;
- and,
- a substrate transfer device constructed and arranged to transfer the rack to and from the first and second reactor;
- wherein the second reactor is provided with an illumination system constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers onto a top surface of each of the plurality of substrates in the rack in the second reactor, and
- wherein the illumination system comprises a plurality of individually controllable radiation sources arranged in at least one linear set that extends perpendicular to the top surfaces of the plurality of substrates along a full length of the rack, and
- wherein the substrate processing apparatus further comprises a power controller configured to control the power of the illumination system, wherein the power controller is programmed to adjust a radiation output of at least one of the plurality of individually controllable radiation sources along the width of the rack.
5 more elements
A substrate processing apparatus, comprising:
- a housing;
- within the housing, a first reactor constructed and arranged to process a rack with a plurality of substrates therein;
- within the housing, a second reactor constructed and arranged to process a substrate;
- within the housing, plasma shielding configured to suppress plasma in the second reactor;
- and,
- within the housing, a substrate transfer device constructed and arranged to transfer the rack and a plurality of substrates to and from the first and second reactor;
- wherein only the second reactor is provided with an illumination system, comprising a plurality of individually controllable radiation sources, constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers concurrently onto a top surface of each of the plurality of substrates in the rack in the second reactor,
- wherein only the first reactor comprises an inlet connected to a source of a first precursor to deposit a layer on the substrates, whereby the first reactor is configured for depositing the layer on the substrates and the second reactor is configured for illuminating the top surface of each of the plurality of substrates with the layer without further deposition occurring in the second reactor, and
- wherein the substrate processing apparatus further comprises a power controller configured to control the power of the illumination system, wherein the power controller is programmed to adjust a radiation output of at least one of the plurality of individually controllable radiation sources along the width of the rack.
6 more elements
Dependencies are inferred from the claim text.