Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate

A semiconductor processing apparatus comprising:

• a multiple chamber module comprising at least a first reaction chamber and a second reaction chamber contained within a common housing, wherein the common housing that defines the first reaction chamber and the second reaction chamber comprises a sidewall;
• a first substrate support structure disposed within the first reaction chamber and a second substrate support structure disposed within the second reaction chamber;
• a wafer handling chamber comprising a double-arm transfer robot comprising generally parallel arms for holding two substrates;
• a tunnel structure affixed to the sidewall and defining a passageway through the sidewall between the wafer handling chamber and the multiple chamber module, wherein the tunnel structure comprises a ceiling, a base, and at least one tunnel sidewall enclosing the passageway between the wafer handling chamber and the multiple chamber module, wherein the double-arm transfer robot is configured to simultaneously transfer a first substrate and a second substrate directly between the wafer handling chamber and the multiple chamber module along a straight-line path through the tunnel structure, wherein the first substrate is transferred along a first transfer path and the second substrate is transferred along a second transfer path, wherein the first transfer path and the second transfer path are separate parallel paths through the tunnel structure, wherein the first transfer path extends between the first substrate support structure and the wafer handling chamber, and the second transfer path extends between the second substrate support structure and the wafer handling chamber, wherein the first transfer path comprises a first length and the second transfer path comprises a second length, wherein the first length and the second length are the same;
• and
• at least a first pyrometer and a second pyrometer attached to the tunnel structure, wherein a first optical path of the first pyrometer intersects the first transfer path within the tunnel structure and a second optical path of the second pyrometer intersects the second transfer path within the tunnel structure;
• wherein the first pyrometer is configured to measure a first temperature across the first substrate as the transfer robot moves the first substrate relative to the first pyrometer along the first transfer path;
• wherein the second pyrometer is configured to measure a second temperature across the second substrate as the transfer robot moves the second substrate relative to the second pyrometer along the second transfer path;
• and
• wherein the first pyrometer and the second pyrometer are positioned parallel to each other in terms of their position along the respective transfer paths such that the first pyrometer and the second pyrometer are configured to substantially simultaneously measure the first and second temperatures, respectively, as the transfer robot simultaneously transfers the first substrate and the second substrate.