Method of forming tungsten film and controller
AssigneeTokyo Electron Limited
InventorsKensaku Narushima, Nagayasu Hiramatsu, Atsushi Matsumoto, Takanobu Hotta
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Abstract
A method of forming a tungsten film in a penetration portion provided in a film formed on a surface of a base so as to expose the surface of the base includes: forming a barrier metal film made of a nitride of a transition metal in the penetration portion such that the barrier metal film formed on the exposed surface of the base is thicker than the barrier metal film formed on a side wall of the penetration portion; and selectively forming the tungsten film on the exposed surface of the base by supplying a tungsten chloride gas and a reducing gas for reducing the tungsten chloride gas to the penetration portion.
Claims11
A method of forming a tungsten film in a penetration portion provided in a film formed on a surface of a base so as to expose the surface of the base, the method comprising:
- forming a barrier metal film made of a nitride of a transition metal in the penetration portion such that the barrier metal film formed on the exposed surface of the base is thicker than the barrier metal film formed on a side wall of the penetration portion;
- and
- selectively forming the tungsten film on the barrier metal film formed on the exposed surface of the base by supplying a tungsten chloride gas and a reducing gas for reducing the tungsten chloride gas to the penetration portion such that the barrier metal film formed on the side wall of the penetration portion is removed by etching while only the barrier metal film formed on the exposed surface of the base remains.
Dependencies are inferred from the claim text.