Titanium dioxide containing ruthenium chemical mechanical polishing slurry
AssigneeCMC Materials, Inc.
InventorsJin-Hao Jhang, Cheng-Yuan Ko
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AssigneeCMC Materials, Inc.
InventorsJin-Hao Jhang, Cheng-Yuan Ko
Estimating the term…
A chemical mechanical polishing composition for polishing a ruthenium containing substrate comprises, consists of, or consists essentially of a water based liquid carrier; titanium oxide particles dispersed in the liquid carrier, the titanium oxide particles including rutile and anatase such that an x-ray diffraction pattern of the titanium oxide particles has a ratio X:Y greater than about 0.05, wherein X represents an intensity of a peak in the x-ray diffraction pattern having a d-spacing of about 3.24 Å and Y represents an intensity of a peak in the x-ray diffraction pattern having a d-spacing of about 3.51 Å; and a pH in a range from about 7 to about 10. Optional embodiments further include a pH buffer having a pKa in a range from about 6 to about 9.
A chemical mechanical polishing composition comprising:
A chemical mechanical polishing composition comprising:
Dependencies are inferred from the claim text.