Boron nitride nanotube purification
AssigneeBnnt, LLC
InventorsThomas G. Dushatinski, Kevin C. Jordan, Michael W. Smith, R. Roy Whitney, Jonathan C. Stevens
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Abstract
Disclosed herein are processes for purifying as-synthesized boron nitride nanotube (BNNT) material to remove impurities of boron, amorphous boron nitride (a-BN), hexagonal boron nitride (h-BN) nanocages, h-BN nanosheets, and carbon-containing compounds. The processes include heating the BNNT materials at different temperatures in the presence of inert gas and a hydrogen feedstock or in the presence of oxygen.
Claims20
A process for purifying boron nitride nanotube (BNNT) material to remove impurities, the process comprising:
- heating the BNNT material at a first temperature for a first duration to remove boron impurities, wherein the first duration is about 0.16-12 hours;
- heating the BNNT material at a second temperature greater than the first temperature for a second duration to remove boron nitride impurities;
- and
- heating the BNNT material at a third temperature less than the second temperature for a third duration to remove boron oxide impurities.
The process of claim lk wherein the second duration is about 1-12 hours.
A process for purifying a BNNT material, the process comprising:
- heating the BNNT material at a first temperature of 500-650° C. for a first duration of 0.16-12 hours in an oxygen-rich environment to remove boron impurities;
- heating the BNNT material at a second temperature of 650-800° C. for a second duration of 1-12 hours to remove boron nitride impurities;
- and
- heating the BNNT material at a third temperature of 500-650° C. for a third duration of 0.16-1 hours to remove boron oxide impurities.
Dependencies are inferred from the claim text.