Silicon wafer single-side polishing method

A silicon wafer single-side polishing method of holding, by a polishing head, a silicon wafer in which a silicon oxide film is formed on a bare silicon surface, and pressing the silicon wafer against a rotatable platen with a polishing cloth attached thereto while rotating the silicon wafer, to polish one side of the silicon water facing the rotatable platen, the silicon wafer single-side polishing method comprising a first polishing step of performing polishing on the one side of the silicon wafer under a first polishing condition relating to an applied pressure for pressing the silicon wafer and a relative speed of the silicon wafer and the rotatable platen;

• and
• a second polishing step of performing polishing on the one side of the silicon wafer under a second polishing condition in which at least one of the applied pressure and the relative speed in the first polishing condition is changed, after the first polishing step,
• wherein a polishing rate ratio of a silicon oxide polishing rate to a silicon polishing rate according to the first polishing condition is higher than a polishing rate ratio of a silicon oxide polishing rate to a silicon polishing rate according to the second polishing condition.