Wafer manufacturing apparatus

A wafer manufacturing apparatus for manufacturing a wafer from a semiconductor ingot in which a peeling layer is formed by positioning a condensing point of a laser beam of a wavelength transmissible through the semiconductor ingot at a depth corresponding to a thickness of the wafer to be manufactured, and applying the laser beam, the wafer manufacturing apparatus comprising:

• a chuck table configured to hold the semiconductor ingot on a suction surface with the wafer to be manufactured on an upper side;
• an ultrasonic oscillating unit having an end surface that faces the wafer to be manufactured, and configured to oscillate an ultrasonic wave;
• a water supply unit configured to supply water between the wafer to be manufactured and the end surface of the ultrasonic oscillating unit;
• a peeling unit configured to suck and hold the wafer to be manufactured, and peel the wafer to be manufactured from the semiconductor ingot;
• and
• a water receiving unit configured to surround the chuck table, and receive the water discharged after being supplied from the water supply unit to the semiconductor ingot and flowing on the suction surface of the chuck table on a periphery of the semiconductor ingot,
• the chuck table including a porous plate forming the suction surface and a base supporting the porous plate and having a communication passage configured to make a negative pressure act on the porous plate, and
• the chuck table sucking and holding the semiconductor ingot even in a state in which an area of a bottom surface of the semiconductor ingot is smaller than an area of the suction surface and the water flows on the suction surface exposed on the periphery of the semiconductor ingot.