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US 11,626,839 B2Granted
Device emitting or detecting terahertz waves, and manufacturing method for device
AssigneeCanon Kabushiki Kaisha
InventorYasushi Koyama
Life of this patent
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Abstract
A device, comprising: an antenna array provided with a plurality of antennas each having a semiconductor layer having terahertz-wave gain; and a coupling line for mutual frequency-locking of at least two of the antennas at a frequency of the terahertz-wave, wherein the coupling line is connected to a shunt device, and the shunt device is connected in parallel to the semiconductor layer of each of the two antennas.
Claims25
A device comprising:
- an antenna array provided with a plurality of antennas each having a semiconductor layer having terahertz-wave gain;
- and
- a coupling line electrically connecting at least two of the antennas at a frequency of the terahertz waves,
- wherein the coupling line is electrically connected to a shunt device,
- wherein the shunt device is electrically connected in parallel to the semiconductor layer of each of the two antennas, and
- wherein the terahertz waves are electromagnetic waves in a frequency region of at least 30 GHz and not more than 30 THz.
3 more elements
A manufacturing method for a device provided with an antenna array having a plurality of antennas, the method comprising:
- a step of forming, on a substrate, a semiconductor layer having terahertz-wave gain;
- a step of forming, on the substrate, a first conductor layer;
- a step of forming a shunt device electrically connected in parallel to a semiconductor layer of each of two antennas, and electrically connected to a coupling line for mutual frequency-locking of the plurality of antennas at the frequency of the terahertz waves;
- and
- a step of forming a third conductor layer to form the coupling line that has a structure where a first dielectric layer is sandwiched between the first conductor layer and the third conductor layer.
2 more elements
A device comprising:
- an antenna array provided with a plurality of antennas each having a semiconductor layer having terahertz-wave gain;
- and
- a coupling line for mutual frequency-locking of at least two of the antennas at a frequency of the terahertz waves,
- wherein the coupling line is electrically connected to a shunt device,
- wherein the shunt device is electrically connected in parallel to the semiconductor layer of each of the two antennas, and
- wherein each of the plurality of antennas includes:
- a substrate;
- a first conductor layer stacked on the substrate;
- the semiconductor layer electrically connected to the first conductor layer;
- a second conductor layer electrically connected to the semiconductor layer and facing the first conductor layer across the semiconductor layer;
- and
- a dielectric layer formed between the first conductor layer and the second conductor layer.
9 more elements
Dependencies are inferred from the claim text.