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US 11,626,528 B2Granted
Photoelectric conversion layer, solar cell, multi-junction solar cell, solar cell module, and photovoltaic power system
AssigneesKabushiki Kaisha Toshiba, Toshiba Energy Systems & Solutions Corporation
InventorsKazushige Yamamoto, Mutsuki Yamazaki, Soichiro Shibasaki, Yuya Honishi, Naoyuki Nakagawa, Yoshiko Hiraoka
Life of this patent
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Abstract
The photoelectric conversion layer of an embodiment is based on Cu2O, contains at least one p-type dopant selected from the group consisting of Ge, Ta, and In, and has a band gap of equal to or more than 2.10 eV and equal to or less than 2.30 eV.
Claims13
A photoelectric conversion layer comprising Cu2O, and further comprising a p-type dopant of Ta, the photoelectric conversion layer having a band gap of equal to or more than 2.10 eV and equal to or less than 2.30 eV.
Dependencies are inferred from the claim text.