Back to results
US 11,626,501 B2Granted
Semiconductor device and method for fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsIn Yeal Lee, Ju Youn Kim, Jin-Wook Kim, Ju Hun Park, Deok Han Bae, Myung Yoon Um
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate, a gate structure on the substrate, and a gate contact in the gate structure. The gate structure includes a gate electrode extending in a first direction and a gate capping pattern on the gate electrode. The gate contact is connected to the gate electrode. The gate electrode includes a protrusion extending along a boundary between the gate contact and the gate capping pattern.
Claims20
A semiconductor device comprising:
- a substrate;
- a gate structure on the substrate, the gate structure including a gate electrode extending in a first direction, a gate capping pattern on the gate electrode, and a gate spacer on a sidewall of the gate electrode extending in the first direction, the gate electrode including a protrusion, the first direction extending parallel to an upper surface of the substrate;
- and
- a gate contact in the gate structure and connected to the gate electrode, the gate contact positioned so the protrusion extends along a boundary between the gate contact and the gate capping pattern,
- wherein the gate capping pattern overlaps the protrusion in the first direction,
- wherein an inner wall of the protrusion is in contact with the gate contact, and
- wherein at least a part of the gate contact in the gate structure is in contact with the gate spacer.
4 more elements
A semiconductor device comprising:
- a substrate including an active region and a field region,
- the substrate including a multi-channel active pattern in the active region, the multi-channel active pattern extending in a first direction;
- a gate structure intersecting the multi-channel active pattern,
- the gate structure including a gate electrode extending in a second direction, a gate capping pattern extending along an upper surface of the gate electrode, and a gate spacer on a side wall of the gate electrode extending in the second direction,
- the gate electrode including a protrusion including an inner wall and an outer wall,
- the inner wall of the protrusion having a concave shape,
- the outer wall being defined along a periphery of the inner wall;
- a source/drain pattern adjacent to at least one side of the gate structure and connected to the multi-channel active pattern;
- a gate contact on the active region of the substrate and connected to the gate electrode, at least a part of the gate contact being in a pocket defined by the inner wall of the protrusion of the gate electrode;
- and
- a source/drain contact on the active region of the substrate and connected to the source/drain pattern, and
- wherein the inner wall is contact with the gate contact,
- wherein the outer wall is contact with the gate capping pattern, and
- wherein at least a part of the gate contact is in contact with the gate spacer.
11 more elements
Dependencies are inferred from the claim text.