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US 11,624,128 B2Granted
Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal
AssigneePanasonic Holdings Corporation
InventorsYusuke Mori, Masashi Yoshimura, Masayuki Imanishi, Akira Kitamoto, Tomoaki Sumi, Junichi Takino, Yoshio Okayama
Life of this patent
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Abstract
A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a germanium element, the concentration of the N-type dopant is 1×1019 cm−3 or more, and the concentration of the germanium element is nine times or more higher than the concentration of the N-type dopant.
Claims9
A group III nitride crystal,
- wherein the group III nitride crystal is doped with an N-type dopant and a germanium element,
- the concentration of the N-type dopant is 1×1019 cm−3 or more, and
- the concentration of the germanium element is nine times or more higher than the concentration of the N-type dopant.
Dependencies are inferred from the claim text.