# US 11,618,683 B2 · Method for chemical vapor deposition of synthetic diamond using multiple hot filament units > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,618,683 B2 - Document ID: US11618683B2 - Status: Granted - Kind: B2 - Application number: 16/627,399 - Filed: 2019-01-08 - Published: 2021-03-25 - Granted: 2023-04-04 - Earliest claimed: 2017-06-28 - Assignees: Icdat Ltd. - Applicants: Icdat Ltd. - Inventors: Dimitry Boguslavsky; Adam Hoffman - Web page: https://patentgrep.com/patent/US11618683B2 ## CPC - C01B 32/26: Preparation (by using ultra-high pressure B01J3/06; by crystal growth C30B29/04) - C23C 16/271: {using hot filaments} - C23C 16/45578: {Elongated nozzles, tubes with holes} - C23C 16/46: characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) - C23C 16/545: {for coating elongated substrates} - C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract A method for synthesizing a diamond by chemical vapor deposition, the method may include heating at least one internal space of at least one hot filament unit; wherein the at least one hot filament unit is positioned in a vacuum chamber; wherein a volume of each internal space out of the at least one internal space is smaller than one half of a volume of the vacuum chamber; feeding at least one gas to the at least one internal space; wherein the at least one gas comprises at least a carbon carrier gas; breaking the at least one gas by the at least one hot filament unit, to provide at least one radical; and depositing the at least one radical on an area of a substrate to provide the diamond. ## Claims ### Claim 1 A method for synthesizing a diamond by chemical vapor deposition, the method comprises: heating at least one internal space of multiple hot filament units; wherein the multiple hot filament units are positioned in a vacuum chamber; wherein a volume of each internal space out of the at least one internal space is smaller than one half of a volume of the vacuum chamber; wherein a hot filament unit of the multiple hot filament units is thermally isolated from at least one other hot filament unit of the multiple hot filament units; feeding a plurality of gases to the at least one internal space; wherein the plurality of gases comprise a carbon carrier gas; breaking the plurality of gases by the multiple hot filament units, to provide at least one radical; and depositing the at least one radical on an area of a substrate to provide the diamond. ### Claim 2 (depends on 1) The method according to claim 1, wherein the carbon carrier gas is methane and the plurality of gasess also comprise H2. ### Claim 3 (depends on 1) The method according to claim 1, wherein the breaking of the plurality of gases is executed while the plurality of gases are within the at least one internal space. ### Claim 4 (depends on 1) The method according to claim 1, wherein the at least one internal space is partially thermally isolated from the substrate. ### Claim 5 (depends on 1) The method according to claim 1, comprising feeding different gases of the plurality of gases to different hot filament units of the multiple hot filament units. ### Claim 6 (depends on 1) The method according to claim 1, comprising independently heating internal spaces of at least two hot filament units of the multiple hot filament units. ### Claim 7 (depends on 1) The method according to claim 1, comprising independently feeding gases of the plurality of gases to at least two hot filament units of the multiple hot filament units. ### Claim 8 (depends on 1) The method according to claim 1, wherein the multiple hot filament units comprise multiple capillary tubes. ### Claim 9 (depends on 1) The method according to claim 1, wherein the multiple hot filament units comprise multiple internal spaces; and wherein the method comprises controlling a flow of the plurality of gases within the at least one internal space using one or more flow controllers. ### Claim 10 (depends on 9) The method according to claim 9 wherein the one or more flow controller are configured to be at least partially positioned at a certain position in which the one or more flow controllers are within the one or more internal spaces. ### Claim 11 (depends on 1) The method according to claim 1, wherein the multiple hot filament units comprise multiple internal spaces. ### Claim 12 (depends on 11) The method according to claim 11 comprising independently heating at least two of the multiple internal spaces. ### Claim 13 (depends on 11) The method according to claim 11 comprising heating the multiple internal spaces by a group of heating elements. ### Claim 14 (depends on 13) The method according to claim 13 wherein there are more internal spaces than heating elements of the group. ### Claim 15 (depends on 1) The method according to claim 1, comprising heating at least one area of the substrate. ### Claim 16 (depends on 1) The method according to claim 1, comprising selectively heating some points of the substrate while preventing from directly heating other points of the substrate. ### Claim 17 (depends on 1) The method according to claim 1, comprising heating by radiation some points of the substrate. ### Claim 18 (depends on 1) The method according to claim 1 wherein the heating of at least one internal space of at least one hot filament unit comprises utilizing an external heating element located outside at least one internal space. ### Claim 19 (depends on 1) The method according to claim 1 a ratio between (a) the volume of the vacuum chamber and (b) a volume of one of the at least one internal space ranges between five and one hundred. ### Claim 20 A method for synthesizing a diamond by chemical vapor deposition, the method comprises: heating internal spaces of multiple hot filament units; wherein the multiple hot filament units are positioned in a vacuum chamber; wherein a volume of each internal space out of the internal spaces is smaller than one half of a volume of the vacuum chamber; feeding a plurality of gases to the internal spaces; wherein the plurality of gases comprise a carbon carrier gas; breaking the plurality of gases by the multiple hot filament units, to provide at least one radical; and depositing the at least one radical on an area of a substrate to provide the diamond; wherein a hot filament unit of the multiple hot filament units and another hot filament unit of the multiple hot filament units are coaxial.