Fabrication of semiconductor structures
AssigneeInternational Business Machines Corporation
InventorsNoelia Vico Trivino, Kirsten Emilie Moselund, Markus Scherrer
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Abstract
The invention relates to a method for fabricating a semiconductor structure. The method comprises fabricating a photonic crystal structure of a first material, in particular a first semiconductor material and selectively removing the first material within a predefined part of the photonic crystal structure. The method further comprises replacing the first material within the predefined part of the photonic crystal structure with one or more second materials by selective epitaxy. The one or more second materials may be in particular semiconductor materials. The invention further relates to devices obtainable by such a method.
Claims19
A method for fabricating a semiconductor structure, the method comprising:
- fabricating a photonic crystal structure of a first material;
- encapsulating the photonic crystal structure of the first material with a third material;
- selectively removing a part of the third material in a predefined part of the photonic crystal structure to provide a window to the first material;
- selectively removing the first material within the predefined part of the photonic crystal structure;
- and
- replacing the first material within the predefined part of the photonic crystal structure with one or more second materials by selective epitaxy.
Dependencies are inferred from the claim text.