Silicon carbide semiconductor device with a contact region having edges recessed from edges of the well region
AssigneeMicrochip Technology Incorporated
InventorsAmaury Gendron-Hansen, Bruce Odekirk
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Abstract
A silicon carbide semiconductor device includes a silicon carbide (SiC) substrate having a SiC epitaxial layer disposed over a surface of the SiC substrate, the SiC substrate having a first conductivity and the SiC epitaxial layer having the first conductivity. A contact region and a well region are formed in the SiC epitaxial layer, the contact region and the well region have a doping level of a second conductivity opposite the first conductivity. The contact region lies completely within the well region, is not in contact with a region having the first conductivity and has edges recessed from edges of the well region.
Claims7
A silicon carbide semiconductor device comprising:
- a silicon carbide (SiC) substrate having a SiC epitaxial layer disposed over a surface of the SiC substrate, the SiC substrate having a first conductivity and the SiC epitaxial layer having the first conductivity;
- and
- a contact region and a well region formed in the SiC epitaxial layer, the contact region and the well region having a respective doping level of a second conductivity opposite the first conductivity, wherein the contact region lies completely within the well region, is not in contact with a region having the first conductivity, and has bottom and side edges in contact with the well region and recessed from edges of the well region.
A semiconductor structure comprising:
- a SiC substrate having a first conductivity;
- a SiC epitaxial layer having the first conductivity disposed over the SiC substrate;
- a well region disposed in the SiC epitaxial layer, the well region having a doping level of a second conductivity opposite the first conductivity and forming a pn junction with the SiC epitaxial layer;
- a contact region having the second conductivity disposed in the well region, the contact region having a doping level higher than the doping level of the first conductivity, the contact region not in contact with a region having the first conductivity, having bottom and side edges in contact with the well region and recessed in from edges of the well region;
- and
- wherein crystal defect damage sites created during formation of the contact region and the well region are separated from a depletion region associated with the pn junction between the well region and the SiC epitaxial layer when the pn junction is reverse biased.
Dependencies are inferred from the claim text.