Monolithic integration of hybrid perovskite single crystals with silicon for highly sensitive X-ray detectors
AssigneeNUtech Ventures
InventorsJinsong Huang, Wei Wei
Life of this patent
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Abstract
Perovskite single crystal X-ray radiation detector devices including an X-ray wavelength-responsive active layer including an organolead trihalide perovskite single crystal, a substrate layer comprising an oxide, and a binding layer disposed between the active layer and the substrate layer. The binding layer including a binding molecule having a first functional group that bonds to the organolead trihalide perovskite single crystal and a second functional group that bonds with the oxide. Inclusion of the binding layer advantageously reduces device noise while retaining signal intensity.
Claims16
A method of fabricating a perovskite single crystal device structure, the method comprising:
- coating a substrate layer with a binding material layer to create a modified substrate surface, the binding material layer including a first functional group that bonds to an organolead trihalide perovskite structure and a second functional group that bonds with an oxide;
- and
- growing an organolead trihalide perovskite single crystal structure on the modified substrate surface.
A method of fabricating a perovskite single crystal device structure, the method comprising:
- coating a silicon substrate layer with a binding material layer to create a modified substrate surface, the binding material layer including brominated (3-aminopropyl)triethoxysilane (APTES) or PEDOT:PSS or molecules that contain one of sulfonic acid groups, phosphate and carboxylate;
- and
- growing an organolead trihalide perovskite single crystal structure on the modified substrate surface, the organolead trihalide perovskite single crystal structure having a composition of MAPbBr3, wherein MA is methylammonium (CH3NH3+).
Dependencies are inferred from the claim text.