Oscillation circuit, semiconductor device for oscillation circuit and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYung-Shun Chen, Chih-Chiang Chang, Yung-Chow Peng
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Abstract
An oscillation circuit is provided. The oscillation circuit includes a first inverting circuit. The first inverting circuit comprises a first transistor of a first type and a second transistor of the first type, wherein a gate terminal of the first transistor is connected to a gate terminal of the second transistor, and a source terminal of the first transistor is connected to a drain terminal of the second transistor.
Claims21
An oscillation circuit, comprising:
- a first inverting circuit having a first transistor of a first type, a second transistor of the first type, a third transistor of a second type, and a fourth transistor of the second type;
- wherein
- the first transistor and the third transistor share a first gate region;
- the second transistor and the fourth transistor share a second gate region;
- the first transistor and the second transistor share a first source/drain region devoid of a pinout terminal and sandwiched by the first gate region and the second gate region;
- and
- the third transistor and the fourth transistor share a second source/drain region devoid of a pinout terminal and sandwiched by the first gate region and the second gate region.
A semiconductor device for an inverting circuit in an oscillation circuit, comprising:
- a first source/drain region sandwiched by a first gate region and a second gate region;
- and
- a second source/drain region sandwiched by the first gate region and the second gate region;
- wherein
- the first source/drain region is devoid of a pinout terminal, and
- the second source/drain region is devoid of a pinout terminal.
A method of manufacturing a semiconductor device for an oscillation circuit, comprising:
- forming a first source/drain region of a first conductive type and a second source/drain region of a second conductive type different than the first conductive type;
- forming a first gate region adjacent to a first side of both the first source/drain region and the second source/drain region;
- forming a second gate region adjacent to a second side of both the first source/drain region and the second source/drain region;
- wherein the first source/drain region is devoid of a pinout terminal, and
- the first gate region and the second gate region extend in parallel along a direction from the first source/drain region to the second source/drain region.
Dependencies are inferred from the claim text.