Filter device, RF front-end device and wireless communication device
AssigneeShenzhen Sunway Communication Co., Ltd.
InventorsChengcheng Yu, Yanjie Cao, Wei Wang
Life of this patent
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Abstract
A filter device, an RF front-end device and a wireless communication device are provided. The filter device includes a substrate, a passive device and at least one resonance device, wherein the passive device has a first side and a second side opposite to the first side, the substrate is located on the first side, and the at least one resonance device is located on the second side. The RF filter device formed by integrating the resonance device (such as an SAW or BAW resonance device) and the passive device (such as an IPD) can broaden the pass-band width, has a high out-of-band rejection, and occupies less space in an RF front-end chip.
Claims35
A filter device, comprising:
- a substrate, a passive device and at least one resonance device, wherein:
- the passive device has a first side and a second side opposite to the first side, the substrate is located on the first side, and the at least one resonance device is located on the second side;
- the at least one resonance device includes a first resonance device, the first resonance device comprises a first intermediate layer, the first intermediate layer has a third side and a fourth side opposite to the third side, and the passive device is located on the third side;
- the first intermediate layer further has a first cavity located in the fourth side;
- the first resonance device further comprises a first electrode layer, a first piezoelectric layer and a second electrode layer;
- at least one terminal of the first electrode layer is located in the first cavity;
- the first piezoelectric layer is located on the fourth side and disposed on the first electrode layer, is a flat layer and at least covers the first cavity;
- the second electrode layer is located on the first piezoelectric layer;
- and
- the first electrode layer and the second electrode layer are respectively located on two sides of the piezoelectric layer.
Dependencies are inferred from the claim text.