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US 11,605,933 B2Granted
Semiconductor lasers and processes for the planarization of semiconductor lasers
AssigneeMACOM Technology Solutions Holdings, Inc.
InventorsAli Badar Alamin Dow, Jason Daniel Bowker, Malcolm R. Green
Life of this patent
Estimating the term…
Abstract
A laser structure may include a substrate, an active region arranged on the substrate, and a waveguide arranged on the active region. The waveguide may include a first surface and a second surface that join to form a first angle relative to the active region. A material may be deposited on the first surface and the second surface of the waveguide.
Claims19
A laser structure, comprising:
- a substrate;
- an active region over the substrate;
- a semiconductor layer over the active region, the semiconductor layer comprising a dovetail waveguide between a first side surface, a second side surface, a top surface, and a lower surface of the semiconductor layer, the dovetail waveguide comprising a first waveguide side surface, a second waveguide side surface, and a central top waveguide surface of the semiconductor layer, the first waveguide side surface joining the lower surface of the semiconductor layer at a first angle, and the second waveguide side surface joining the lower surface of the semiconductor layer at a second angle;
- and
- a material between the central top waveguide surface, the first waveguide side surface, the lower surface, the first side surface, and the top surface of the semiconductor layer on one side of the dovetail waveguide, and between the central top waveguide surface, the second waveguide side surface, the lower surface, the second side surface, and the top surface of the semiconductor layer on another side of the dovetail waveguide, with an opening in the material at the central top waveguide surface of the semiconductor layer, the material planarizing the first angle and the second angle of the dovetail waveguide between the central top waveguide surface, the top surface, the lower surface, the first side surface, and the second side surface of the semiconductor layer, wherein the material comprises an insulating layer of one of MgO or MgF2.
2 more elements
A method of fabricating a laser structure, comprising:
- arranging an active region over a substrate;
- arranging a semiconductor layer over the active region, the semiconductor layer comprising a dovetail waveguide between a first side surface, a second side surface, a top surface, and a lower surface of the semiconductor layer, the dovetail waveguide comprising a first waveguide side surface, a second waveguide side surface, and a central top waveguide surface of the semiconductor layer, the first waveguide side surface joining the lower surface of the semiconductor layer at a first angle, and the second waveguide side surface joining the lower surface of the semiconductor layer at a second angle;
- and
- depositing an insulating layer between the central top waveguide surface, the first waveguide side surface, the lower surface, the first side surface, and the top surface of the semiconductor layer on one side of the dovetail waveguide, and between the central top waveguide surface, the second waveguide side surface, the lower surface, the second side surface, and the top surface of the semiconductor layer on another side of the dovetail waveguide, with an opening in the insulating layer at the central top waveguide surface of the semiconductor layer, the insulating layer planarizing the first angle and the second angle of the dovetail waveguide between the central top waveguide surface, the top surface, the lower surface, the first side surface, and the second side surface of the semiconductor layer, wherein the insulating layer comprises of one of MgO or MgF2.
1 more element
Dependencies are inferred from the claim text.