Distributed feedback laser
AssigneeRockley Photonics Limited
InventorsMazin Alalusi, Kevin Masuda, Pradeep Srinivasan
Life of this patent
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Abstract
A Distributed Feedback Laser (DFB) mounted on a Silicon Photonic Integrated Circuit (Si PIC), the DFB having a longitudinal length which extends from a first end of the DFB laser to a second end of the DFB laser, the DFB laser comprising: an epi stack, the epi stack comprising: one or more active material layers; a layer comprising a partial grating, the partial grating extending from the second end of the DFB laser, only partially along the longitudinal length of the DFB laser such that it does not extend to the first end of the DFB laser; a highly reflective medium located at the first end of the DFB laser; and a back facet located at the second end of the DFB laser.
Claims19
A Distributed Feedback (DFB) Laser for mounting on a Silicon Photonic Integrated Circuit (Si PIC), the DFB laser having a longitudinal length which extends from a first end of the DFB laser to a second end of the DFB laser, the DFB laser comprising:
- an epi stack, the epi stack comprising:
- one or more active material layers;
- and
- a layer comprising a partial grating, the partial grating extending from the second end of the DFB laser, only partially along the longitudinal length of the DFB laser such that it does not extend to the first end of the DFB laser;
- a highly reflective medium located at the first end of the DFB laser;
- and
- a back facet located at the second end of the DFB laser, and
- the DFB laser being enabled to operate without a cooling device,
- wherein a lasing wavelength, which is defined by the partial grating, has a shorter wavelength than a material gain peak of the epi stack.
A Distributed Feedback (DFB) Laser for mounting on a Silicon Photonic Integrated Circuit (Si PIC), the DFB laser having a longitudinal length which extends from a first end of the DFB laser to a second end of the DFB laser, the DFB laser comprising:
- an epi stack, the epi stack comprising:
- one or more active material layers;
- and
- a layer comprising a partial grating, the partial grating extending from the second end of the DFB laser, only partially along the longitudinal length of the DFB laser such that it does not extend to the first end of the DFB laser;
- a highly reflective medium located at the first end of the DFB laser;
- and
- a back facet located at the second end of the DFB laser, and
- the DFB laser being enabled to operate without an optical isolator,
- wherein a lasing wavelength, which is defined by the partial grating, has a shorter wavelength than a material gain peak of the epi stack.
A Distributed Feedback (DFB) Laser for mounting on a Silicon Photonic Integrated Circuit (Si PIC), the DFB laser having a longitudinal length which extends from a first end of the DFB laser to a second end of the DFB laser, the DFB laser comprising:
- an epi stack, the epi stack comprising:
- one or more active material layers;
- and
- a layer comprising a partial grating, the partial grating extending from the second end of the DFB laser, only partially along the longitudinal length of the DFB laser such that it does not extend to the first end of the DFB laser, and defining a lasing wavelength having a wavelength that is shorter than a material gain peak of the epi stack;
- a highly reflective medium located at the first end of the DFB laser;
- and
- a back facet located at the second end of the DFB laser.
Dependencies are inferred from the claim text.