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US 11,605,541 B2Granted
Diamond semiconductor system and method
AssigneeAkhan Semiconductor, Inc.
InventorAdam Khan
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Abstract
Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.
Claims10
A method of fabricating doped diamond films, comprising:
- providing polycrystalline diamond material having less than micrometer grain size;
- introducing a first set of dopant atoms to at least one layer of less than 900 nm of the polycrystalline diamond material to form a plurality of pathways;
- and
- introducing a second set of dopant atoms larger than the first set of dopant atoms into the polycrystalline diamond material at least in part by passage through the plurality of pathways.
1 more element
Dependencies are inferred from the claim text.