Wafer placement table and method for manufacturing the same

#The present invention relates to a wafer placement table and a method for manufacturing the wafer placement table.

#For example, the wafer placement table described in PTL 1 is known. PTL 1 discloses a wafer placement table including a ceramic member, a mesh electrode, a conductive connection member, and an external current-carrying member. The ceramic member has a wafer placement surface. The mesh electrode is buried in the ceramic member. The connection member is in contact with the mesh electrode and exposed to outside from a surface of the ceramic member on the opposite side of the wafer placement surface. The external current-carrying member is jointed to a surface of the connection member exposed to outside with a joining layer interposed therebetween.

#PTL 1: WO 2015/198892

#FIG. 1 is a longitudinal cross-sectional view of main parts of a wafer placement table 10.

#FIG. 2 is a partial plan view of a mesh electrode 14.

#FIGS. 3A to 3E illustrate views of steps for manufacturing the wafer placement table 10.

#Next, a wafer placement table 10 according to a preferred embodiment of the present invention will be described below. FIG. 1 is a longitudinal cross-sectional view of main parts of the wafer placement table 10, and FIG. 2 is a partial plan view of a mesh electrode 14.

#The wafer placement table 10 is used to place a wafer to be subjected to a treatment such as etching or CVD. The wafer placement table 10 is installed in a vacuum chamber (not shown). The wafer placement table 10 includes a ceramic member 12, a mesh electrode 14, a sintered conductor 15, a connection member 16, an external current-carrying member 18, and a guide member 22.

#The ceramic member 12 is formed in a circular plate shape, and one surface of the ceramic member 12 is a wafer placement surface 12a for placing a wafer. In FIG. 1, the wafer placement surface 12a faces downward. In actual use of the wafer placement table 10, the wafer placement surface 12a faces upward. The material of the ceramic member 12 is preferably, for example, aluminum nitride, aluminum oxide, silicon carbide, silicon nitride, or the like. A hole 12c having a bottomed cylindrical shape is formed in a surface 12b of the ceramic member 12 on the opposite side of the wafer placement surface 12a. The ceramic member 12 may have, for example, a diameter of 150 to 500 mm and a thickness of 0.5 to 30 mm. The hole 12c may have, for example, a diameter of 5 to 15 mm and a depth of 5 to 25 mm.