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US 11,601,610 B2Granted
Image sensor
AssigneeSony Semiconductor Solutions Corporation
InventorsTakashi Moue, Hiroaki Yatsuda
Life of this patent
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Abstract
It is an object of the present technology to provide an image sensor capable of reducing crosstalk in an AD conversion unit. The image sensor includes: capacitors in an even-numbered column region; and a capacitor in an odd-numbered column region disposed facing the capacitors in the even-numbered column region with different areas.
Claims10
A light detecting device, comprising:
- a first comparator including:
- first differential transistors including a first transistor and a second transistor disposed in a first column region;
- a first capacitance coupled between a first pixel signal line and the first transistor and disposed in the first column region;
- a second capacitance coupled between a first reference signal line and the first transistor and disposed in the first column region;
- a third capacitance selectively coupled to the first capacitance and the second capacitance and disposed in the first column region;
- and
- a fourth capacitance coupled between a reference potential and the second transistor and arranged to be split among a first subregion and a second subregion of the first column region,
- wherein the first capacitance is disposed between the first subregion of the fourth capacitance and the second subregion of the fourth capacitance along a column direction of the first column region.
5 more elements
Dependencies are inferred from the claim text.