Key generator with resistive memory and method thereof
AssigneeWinbond Electronics Corp.
InventorsMeng-Hung Lin, Chia Hua Ho, Bo-Lun Wu
Life of this patent
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Abstract
A key generator including a first access circuit, a first calculating circuit and a first certification circuit is provided. The first access circuit writes first predetermined data to a first resistive memory cell during a write period and reads a first current passing through the first resistive memory cell after a randomization process. The first calculating circuit calculates the first current to generate a first calculation result. The first certification circuit generates a first password according to the first calculation result.
Claims15
A key generator comprising:
- a first access circuit writing first predetermined data to a first resistive memory cell during a write period and reading a first current passing through the first resistive memory cell after a randomization process;
- a first calculating circuit calculating the first current to generate a first calculation result;
- and
- a first certification circuit generating a first password according to the first calculation result;
- wherein, the randomization process is to heat the first resistive memory cell.
A key generation method for a resistive random access memory (RRAM), comprising:
- writing predetermined data to a first resistive memory cell during a write period;
- reading a first current passing through the first resistive memory cell after a randomization process;
- calculating the first current to generate a first calculation result;
- and
- generating a first password according to the first calculation result;
- wherein, the randomization process is to heat the first resistive memory cell.
Dependencies are inferred from the claim text.