Low power cryo-CMOS circuits with non-volatile threshold voltage offset compensation

A method in a system comprising a first plurality of devices and a second plurality of devices, different from the first plurality of devices, the method comprising:

• determining a first variation among first threshold voltages of the first plurality of devices while operating the integrated circuit in a cryogenic environment, wherein each of the first plurality of devices comprises a floating gate;
• determining a second variation among second threshold voltages of the second plurality of devices while operating the integrated circuit in a cryogenic environment, wherein each of the second plurality of devices comprises a floating gate;
• modifying first threshold voltages associated with at least a subset of the first plurality of devices by:
• (1) injecting charge into a respective floating gate or (2) removing charge from a respective floating gate such that a variation among the first threshold voltages of the first plurality of devices is lowered;
• and
• modifying second threshold voltages associated with at least a subset of the second plurality of devices by:
• (1) injecting charge into a respective floating gate or (2) removing charge from a respective floating gate such that a variation among the second threshold voltages of the second plurality of devices is lowered.

A system comprising:

• a first integrated circuit comprising a quantum device including a plurality of qubit gates, wherein the quantum device is configured to operate at a cryogenic temperature;
• and
• a second integrated circuit configured to operate at the cryogenic temperature, wherein the first integrated circuit is coupled to the second integrated circuit, and wherein the second integrated circuit comprises:
• a first plurality of devices,
• a second plurality of devices, different from the first plurality of devices, and
• control logic, coupled to each of the first plurality of devices and the second plurality of devices, configured to modify a threshold voltage associated with each of the first plurality of devices and the second plurality of devices such that a first threshold voltage associated with each of the first plurality of devices is different from a second threshold voltage associated with each of the second plurality of devices.