Semiconductor protection circuit
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorChen Kong Teh
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a semiconductor protection circuit includes a first MOS transistor that has a drain that is connected to an input terminal, a source that is connected to an output terminal, and a gate that is connected to a control terminal, a second MOS transistor that has a drain that is connected to the gate of the first MOS transistor and a source that is connected to the source of the first MOS transistor, a rectifier element that is connected in a forward direction from a gate of the second MOS transistor to the gate of the first MOS transistor, and a low-pass filter that is connected between the gate and the source of the second MOS transistor.
Claims21
A semiconductor protection circuit, comprising:
- a first MOS transistor that has a drain that is connected to an input terminal, a source that is connected to an output terminal, and a gate that is connected to a control terminal;
- a second MOS transistor that has a drain that is connected to the gate of the first MOS transistor and a source that is connected to the source of the first MOS transistor;
- a rectifier element that is connected in a forward direction from a gate of the second MOS transistor to the gate of the first MOS transistor;
- and
- a low-pass filter that is connected between the gate and the source of the second MOS transistor.
A semiconductor protection circuit, comprising:
- a first conductivity type first MOS transistor that has a drain that is connected to an input terminal, a source that is connected to an output terminal, and a gate that is connected to a control terminal;
- a second conductivity type second MOS transistor that has a source that is connected to the gate of the first MOS transistor and a drain that is connected to the source of the first MOS transistor;
- a resistance element that is connected between a gate of the second MOS transistor and the gate of the first MOS transistor;
- and
- a high-pass filter that is connected between the gate and the drain of the second MOS transistor.
A semiconductor protection circuit, comprising:
- a first MOS transistor that has a drain that is connected to an input terminal, a source that is connected to an output terminal, and a gate that is connected to a control terminal;
- a second MOS transistor that has a drain that is connected to the gate of the first MOS transistor and a source that is connected to the source of the first MOS transistor;
- a rectifier element that is connected in a forward direction from a gate of the second MOS transistor to the gate of the first MOS transistor;
- a low-pass filter that is connected between the gate and the source of the second MOS transistor;
- a power source that supplies an input voltage to the input terminal;
- and
- a control circuit that supplies a control signal that controls a conduction state of the first MOS transistor to the control terminal.
Dependencies are inferred from the claim text.