Antenna-in-package device with chip embedding technologies

A semiconductor device comprising:

• a dielectric substrate;
• an integrated circuit (IC) die disposed inside an opening of the dielectric substrate, wherein the IC die is configured to transmit or receive radio frequency (RF) signals;
• a first dielectric material in the opening of the dielectric substrate and around the IC die, wherein the first dielectric material is a single-material layer;
• a redistribution structure along a first side of the first dielectric material, wherein a first conductive feature of the redistribution structure is electrically coupled to the IC die;
• a second conductive feature along and directly contacting a second side of the first dielectric material opposing the first side;
• a dielectric layer having a first surface directly contacting and extending along the second side of the first dielectric material, and having a second surface distal from the first dielectric material, wherein the dielectric layer comprises a second dielectric material that extends continuously from the first surface of the dielectric layer to the second surface of the dielectric layer;
• a via extending through the dielectric substrate, wherein the via electrically couples the first conductive feature and the second conductive feature;
• an antenna directly contacting and extending along the second surface of the dielectric layer, wherein the second conductive feature is configured to be electrically or electromagnetically coupled to the antenna;
• and
• a grounded metal layer in the dielectric layer, wherein the grounded metal layer has an opening and is between the antenna and the second conductive feature.

A semiconductor device comprising:

• a radio-frequency integrated circuit (RFIC) in an opening of a dielectric core;
• a first dielectric material in the opening of the dielectric core around the RFIC, wherein the first dielectric material directly contacts and extends along a first side of the dielectric core and an opposing second side of the dielectric core, wherein the first dielectric material has a homogenous composition;
• a via extending through the dielectric core;
• a redistribution structure at the first side of the dielectric core, wherein a first conductive feature of the redistribution structure is electrically coupled to the RFIC;
• a second conductive feature at the second side of the dielectric core, wherein the second conductive feature directly contacts and extends along a first side of the first dielectric material distal from the RFIC, and is electrically coupled to the first conductive feature by the via;
• a dielectric layer at the second side of the dielectric core, wherein a first surface of the dielectric layer directly contacts the first side of the first dielectric material, wherein a second dielectric material of the dielectric layer extends continuously from the first surface of the dielectric layer to a second surface of the dielectric layer opposing the first surface;
• and
• an antenna at the second side of the dielectric core, wherein the antenna directly contacts and extends along the second surface of the dielectric layer, and is configured to be electrically or electromagnetically coupled to the second conductive feature.