Semiconductor solid state battery
AssigneesKabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
InventorsAtsuya Sasaki, Akito Sasaki, Yoshinori Kataoka, Hideaki Hirabayashi, Shuichi Saito
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Abstract
A semiconductor solid state battery has an insulating layer provided between an N-type semiconductor and a P-type semiconductor. The first insulating layer preferably has a thickness of 3 nm to 30 μm and a dielectric constant of 10 or less. The first insulating layer preferably has a density of 60% or more of a bulk body. The semiconductor layer preferably has a capture level introduced. The semiconductor solid state battery can eliminate leakage of an electrolyte solution.
Claims20
A semiconductor solid state battery comprising:
- an N-type semiconductor;
- a P-type semiconductor;
- and
- a first insulating layer provided between the N-type semiconductor and the P-type semiconductor,
- wherein the first insulating layer has a thickness of 3 nm to 30 μm and a dielectric constant of 50 or less.
A semiconductor solid state battery comprising:
- an N-type semiconductor;
- a P-type semiconductor;
- and
- a first insulating layer provided between the N-type semiconductor and the P-type semiconductor, the N-type semiconductor or the P-type semiconductor comprising a capture level for electrons or holes introduced therein.
A semiconductor solid state battery comprising:
- an N-type semiconductor;
- a P-type semiconductor;
- a first insulating layer provided between the N-type semiconductor and the P-type semiconductor;
- a first electrode provided on the N-type semiconductor;
- a second electrode provided on the P-type semiconductor;
- and
- a second insulating layer provided between the N-type semiconductor and the first electrode, a third insulating layer provided between the P-type semiconductor and the second electrode, or both the second insulating layer and the third insulating layer.
Dependencies are inferred from the claim text.