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US 11,600,796 B2Granted
Quantum dot light-emitting diode and method of fabricating the same
AssigneeUniversity-Industry Cooperation Group of Kyung Hee University
InventorsJin Jang, Christophe Avis, Jeong Gi Kim
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Abstract
Disclosed is a quantum dot light-emitting diode including a positive electrode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a negative electrode, wherein the hole injection layer is a p-type oxide semiconductor represented by Formula 1 below: Cu2Sn2-XS3—(GaX)2O3, [Formula 1] wherein X is greater than 0.2 and less than 1.5 (0.2<x<1.5).
Claims7
A method of fabricating a quantum dot light-emitting diode, comprising:
- forming a positive electrode on a substrate;
- forming a hole injection layer on the positive electrode;
- forming a hole transport layer on the hole injection layer;
- forming a light-emitting layer on the hole transport layer;
- forming an electron transport layer on the light-emitting layer;
- and
- forming a negative electrode on the electron transport layer,
- wherein the hole injection layer is formed by forming a film using a solution prepared by mixing a p-type oxide semiconductor represented by Formula 1 below and a solvent:
- Cu2Sn2-XS3—(GaX)2O3, [Formula 1]
- wherein X is greater than 0.2 and less than 1.5 (0.2<x<1.5).
7 more elements
Dependencies are inferred from the claim text.