Apparatus for and method of fabricating semiconductor device

A method of fabricating a phase transition memory device, comprising:

• forming a lower electrode on a substrate;
• forming a mold layer having a contact hole exposing the lower electrode;
• and
• forming a phase transition layer in the contact hole,
• wherein forming the phase transition layer in the contact hole comprises:
• providing the substrate on a heater chuck in a chamber including a housing and a slit valve, wherein the slit valve is configured to open or close a portion of the housing;
• heating the substrate using the heater chuck;
• and
• depositing the phase transition layer on the substrate by a physical vapor deposition method using a heat-dissipation shield between the housing and the heater chuck, and an edge heating structure between the heat-dissipation shield and the housing,
• wherein the edge heating structure comprises:
• an upper lamp provided above a level of a top surface of the slit valve;
• and
• a lower lamp provided below a level of a bottom surface of the slit valve, and
• wherein the heat-dissipation shield includes a tube shield, which extends from a top portion of the housing to a region below the heater chuck and has a first opening adjacent to the slit valve.

A method of fabricating a semiconductor device, comprising:

• providing a substrate on a heater chuck in a chamber including a housing and a slit valve, wherein the slit valve is configured to open or close a portion of the housing;
• heating the substrate using the heater chuck, wherein the heater chuck is rotated by a shaft disposed on a bottom of the housing;
• and
• depositing a phase transition layer on the substrate by a physical vapor deposition method using a heat-dissipation shield between the housing and the heater chuck, and an edge heating structure between the heat-dissipation shield and the housing,
• wherein the edge heating structure comprises:
• an upper lamp provided above a level of a top surface of the slit valve, and
• a lower lamp provided below a level of a bottom surface of the slit valve,
• wherein the heat-dissipation shield comprises:
• a tube shield, which extends from a top portion of the housing to a region below the heater chuck and has a first opening adjacent to the slit valve and a second opening opposed to the first opening,
• a first sector shield connected to the shaft and configured to open or close the first opening, and
• a second sector shield connected to the shaft and configured to open or close the second opening.