Nonvolatile memory device and operating method of the same
AssigneesSamsung Electronics Co., Ltd., President and Fellows of Harvard College
InventorsMinhyun Lee, Houk Jang, Donhee Ham, Chengye Liu, Henry Julian Hinton, Haeryong Kim, Hyeonjin Shin
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Abstract
A nonvolatile memory device includes a resistance switching layer, a gate on the resistance switching layer, a gate oxide layer between the resistance switching layer and the gate, and a source and a drain, spaced apart from each other, on the resistance switching layer. A resistance value of the resistance switching layer is changed based on an illumination of light irradiated onto the resistance switching layer and is maintained as a changed resistance value.
Claims11
A nonvolatile memory device comprising:
- a resistance switching layer having a resistance value, the resistance switching layer configured to change the resistance value based on an illumination of light irradiated thereto, and the resistance switching layer configured to maintain the changed resistance value;
- a gate on the resistance switching layer;
- a gate oxide layer between the resistance switching layer and the gate;
- and
- a source and a drain, spaced part from each other, on the resistance switching layer,
- wherein the resistance switching layer includes defects such that charges, generated by the illumination of the light, are trapped in the resistance switching layer to maintain the change in the resistance value of the resistance switching layer.
Dependencies are inferred from the claim text.