Resistance variable device with chalcogen-containing layer

A resistance variable device, comprising:

• a first electrode;
• a second electrode;
• and
• a stack arranged between the first electrode and the second electrode and including a resistance variable layer and a chalcogen-containing layer, wherein
• the resistance variable layer constitutes a magnetoresistive random access memory, and
• the chalcogen-containing layer which is a switch layer, contains a material having a composition represented by a general formula:
• C1xC2yAzNw
• wherein C1 is at least one element selected from the group consisting of Sc, Y, Zr and Hf, C2 is at least one element selected from the group consisting of C, Si, Ge, B, Al, Ga, and In, A is at least one element selected from the group consisting of S, Se, and Te, and x, y, z, and w are numbers representing atomic fractions satisfying 0<x<1, 0<y<1, 0<z<1, 0<w<1, and x+y+z+w=1, and when an oxidation number of the element C1 is set to a, and an oxidation number of the element C2 is set to b, the atomic fraction x of the element C1 satisfies x≤(3−(3+b)×y−z)/(3+a), and the atomic fraction w of N satisfies w<(a−(a−b)×y−(a+2)×z)/(3+a).

A resistance variable device, comprising:

• a first electrode;
• a second electrode;
• and
• a stack arranged between the first electrode and the second electrode and including a resistance variable layer and a chalcogen-containing layer, wherein
• the resistance variable layer constitutes a magnetoresistive random access memory,
• the chalcogen-containing layer which is a switch layer, contains at least one element C1 selected from the group consisting of Zr and Hf, at least one element C2 selected from the group consisting of C, Si, Ge, B, Al, Ga, and In, and at least one element A selected from the group consisting of S, Se, and Te, and
• the chalcogen-containing layer further contains N.