Spin-orbit torque switching device with tungsten nitride
AssigneeKorea University Research and Business Foundation
InventorsYoung Keun Kim, Yong Jin Kim, Min Hyeok Lee
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Abstract
A magnetic device includes a pinned layer having a fixed magnetization direction, a free layer having a switched magnetization direction, a tunnel insulating layer interposed between the pinned layer and the free layer, and a spin-torque generation layer injecting spin current into the free layer as in-plane current flows. The spin current allows a magnetization direction of the free layer to be switched by a spin-orbit torque. The pinned layer and the free layer have perpendicular magnetic anisotropy. The spin-torque generation layer includes a tungsten layer and a tungsten-nitride layer sequentially stacked. The tungsten-nitride layer is disposed adjacent to the free layer.
Claims10
A magnetic device comprising:
- a pinned layer having a fixed magnetization direction;
- a free layer having a switched magnetization direction;
- a tunnel insulating layer interposed between the pinned layer and the free layer;
- and
- a spin-torque generation layer injecting spin current into the free layer as in-plane current flows,
- wherein the spin current allows a magnetization direction of the free layer to be switched by a spin-orbit torque,
- the pinned layer and the free layer have perpendicular magnetic anisotropy,
- the spin-torque generation layer includes a tungsten layer and a tungsten-nitride layer sequentially stacked,
- the tungsten-nitride layer is disposed adjacent to the free layer, and
- wherein the tungsten-nitride layer decreases a switching in-plane current of the spin-torque generation layer for the free layer.
A magnetic device comprising:
- a pinned layer having a fixed magnetization direction;
- a free layer having a switched magnetization direction;
- a tunnel insulating layer interposed between the pinned layer and the free layer;
- a spin-torque generation layer injecting spin current into the free layer as in-plane current flows;
- and
- a tungsten-nitride layer disposed between the free layer and the spin-torque generation layer,
- wherein the spin current allows a magnetization direction of the free layer to be switched by a spin-orbit torque,
- the pinned layer and the free layer have perpendicular magnetic anisotropy,
- the spin-torque generation layer includes a tungsten layer,
- the tungsten-nitride layer is vertically aligned with the free layer, and
- wherein the tungsten-nitride layer decreases a switching in-plane current of the spin-torque generation layer for the free layer.
A magnetic device comprising:
- a pinned layer having a fixed magnetization direction;
- a free layer having a switched magnetization direction;
- a tunnel insulating layer interposed between the pinned layer and the free layer;
- and
- a spin-torque generation layer injecting spin current into the free layer as in-plane current flows,
- wherein the spin current allows a magnetization direction of the free layer to be switched by a spin-orbit torque,
- the pinned layer and the free layer have perpendicular magnetic anisotropy,
- the spin-torque generation layer includes a tungsten-nitride layer,
- nitrogen atomic percent of the tungsten-nitride layer is 2% to 5%,
- the tungsten-nitride layer is disposed adjacent to the free layer, and
- wherein the tungsten-nitride layer decreases a switching in-plane current of the spin-torque generation layer for the free layer.
Dependencies are inferred from the claim text.