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AssigneeIntegrated Silicon Solution, (Cayman) Inc.
InventorsMustafa Pinarbasi, Andrew J. Walker, Dafna Beery
Estimating the term…
A spin orbit torque memory device having a vertical transistor structure. The spin orbit torque memory device includes a magnetic memory element such as a magnetic tunnel junction formed on a spin orbit torque layer. The vertical transistor structure selectively provides an electrical current to the spin orbit torque layer to switch a memory state of the magnetic memory element. The vertical transistor structure accommodates the relatively high electrical current needed to provide spin orbit torque switching while also consuming a small amount of wafer real estate. The vertical transistor structure can include a semiconductor pillar structure surrounded by a gate dielectric layer and a gate structure such that the gate dielectric layer separates the gate structure from the semiconductor pillar.
A data recording device, comprising:
A data recording device, comprising:
Dependencies are inferred from the claim text.