Method for manufacturing a monocrystalline piezoelectric layer
AssigneeSoitec
InventorsBruno Ghyselen, Ionut Radu, Jean-Marc Bethoux
Life of this patent
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Abstract
A method for manufacturing a monocrystalline piezoelectric material layer includes providing a donor substrate made of the piezoelectric material, providing a receiving substrate, transferring a so-called “seed layer” of the donor substrate onto the receiving substrate, and using epitaxy of the piezoelectric material on the seed layer until the desired thickness for the monocrystalline piezoelectric layer is obtained.
Claims12
A method of fabricating a monocrystalline piezoelectric layer, comprising:
- providing a donor substrate comprising a piezoelectric material;
- providing a receiving substrate;
- transferring a seed layer from the donor substrate onto the receiving substrate, wherein the transferring comprises the following steps:
- forming a zone of weakness in the donor substrate by implanting ions into the donor substrate so as to delimit the seed layer to be transferred;
- bonding the donor substrate onto the receiving substrate, the seed layer to be transferred being at an interface between the donor substrate and the receiving substrate;
- and
- detaching the donor substrate along the zone of weakness so as to transfer the seed layer onto the receiving substrate;
- and
- epitaxially growing the piezoelectric material on the seed layer to form the monocrystalline piezoelectric layer until the monocrystalline piezoelectric layer has a predetermined thickness.
A method of fabricating a monocrystalline piezoelectric layer, comprising:
- providing a donor substrate comprising a piezoelectric material;
- providing a receiving substrate;
- transferring a seed layer from the donor substrate onto the receiving substrate;
- removing a portion of the thickness of the seed layer after transferring the seed layer onto the receiving substrate;
- and
- after removing the portion of the thickness of the seed layer, epitaxially growing the piezoelectric material on the seed layer to form the monocrystalline piezoelectric layer until the monocrystalline piezoelectric layer has a predetermined thickness.
A method of fabricating a monocrystalline piezoelectric layer, comprising:
- providing a donor substrate comprising a piezoelectric material;
- providing a receiving substrate;
- transferring a seed layer from the donor substrate onto the receiving substrate;
- epitaxially growing the piezoelectric material on the seed layer to form the monocrystalline piezoelectric layer until the monocrystalline piezoelectric layer has a predetermined thickness;
- transferring at least a portion of the monocrystalline piezoelectric layer to a final substrate after epitaxially growing the piezoelectric material on the seed layer to form the monocrystalline piezoelectric layer;
- and
- removing the seed layer after transferring the at least a portion of the monocrystalline piezoelectric layer to the final substrate.
Dependencies are inferred from the claim text.