Asymmetrical PN junction thermoelectric couple structure and its parameter determination method
AssigneeJiangsu University
InventorsRuochen Wang, Ding Luo, Wei Yu, Weiqi Zhou, Long Chen
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Abstract
The present invention discloses an asymmetrical PN junction thermoelectric couple structure and its parameter determination method. By changing the structural parameters of p-type semiconductor or n-type semiconductor, the current generated by p-type semiconductor is equal to the current generated by the n-type semiconductor, so that the high-efficiency output of PN junction thermoelectric couple can be realized. Meanwhile, the present invention provides a method for determining the parameters of PN junction based on the numerical solution method. Finally, the optimal size parameters of PN junction are obtained.
Claims15
A method for determining the parameters of an asymmetric PN junction thermoelectric couple structure, comprising the following steps:
- calculating an integral mean value of electrical resistivity of a p-type semiconductor ρp and an integral mean value of electrical resistivity of a n-type semiconductor ρn;
- determining a length relationship between the p-type semiconductor and the n-type semiconductor;
- establishing differential equations of PN junction thermoelectric couple structure;
- setting boundary conditions to calculate the Peltier heat of the p-type semiconductor and the n-type semiconductor;
- setting current boundary conditions to connect load resistance with copper electrodes;
- setting temperature boundary conditions to load the temperature, and
- calculating an output voltage at both ends of the load resistance to get an output power of the PN junction thermoelectric couple.
An asymmetric PN junction thermoelectric couple structure comprising top and bottom ceramic plates in opposite arrangement, copper electrodes, and a p-type semiconductor and an n-type semiconductor with the same height,
- wherein top and bottom contact surfaces of the p-type semiconductor and the n-type semiconductor are connected in series by the copper electrodes, and are sandwiched between the top and bottom ceramic plates,
- wherein the sum of length of the p-type semiconductor Lp and the length of n-type semiconductor Ln is 2L,
- and L is the initial length of p-type semiconductor and n-type semiconductor.
Dependencies are inferred from the claim text.