Semiconductor light-emitting device and manufacturing method therefor

A semiconductor light emitting device comprising:

• a substrate;
• a first semiconductor layer, which is provided on the substrate and has a first conductivity;
• an active layer, which is provided on the first semiconductor layer and generates ultraviolet light by electron-hole recombination;
• a second semiconductor layer, which is provided on the active layer and has a second conductivity different from the first conductivity;
• a first electrode electrically connected to the first semiconductor layer;
• and
• a second electrode electrically connected to the second semiconductor layer;
• wherein the first semiconductor layer surrounds the active layer and the second semiconductor layer,
• wherein the active layer and the second semiconductor layer form a perimeter,
• wherein a plurality of regions of the active layer, in which the active layer at a predefined distance away from the perimeter does not emit ultraviolet light, are formed,
• wherein a passage is present between the regions that has a width smaller than a minimum width of the perimeter passing by the regions,
• wherein the perimeter is at the predefined distance away from the regions, and the width of the passage is less than twice the predefined distance, and
• wherein the minimum width of the perimeter and the width of the passage each correspond to a length between opposing edges of the perimeter.