Light-emitting semiconductor component and method for producing a light-emitting semiconductor component

A method for producing a light-emitting semiconductor component comprising:

• a semiconductor body comprising an active region configured to emit a primary radiation;
• a first conversion element configured to convert part of the primary radiation to a first secondary radiation;
• a second conversion element configured to at least partially convert the primary radiation to a second secondary radiation, wherein:
• the first conversion element and the second conversion element are arranged at a top side of the semiconductor body;
• the first conversion element and the second conversion element are configured as bodies that partly cover the semiconductor body at the top side thereof, and
• the first conversion element and the second conversion element are connected to the semiconductor body;
• a dielectric mirror at at least the top side of the semiconductor body;
• wherein the dielectric mirror is configured to reflect the primary radiation and is transmissive to the first secondary radiation and the second secondary radiation, and wherein the dielectric mirror has at least one opening configured to transmit the primary radiation;
• a planarization layer arranged between the semiconductor body and the dielectric mirror, wherein the planarization layer is arranged over the first conversion element and the second conversion element;
• a mask arranged and on the semiconductor body, wherein the first conversion element and the second conversion element are arranged on the mask;
• wherein the mask has an opening in a region of each of the first conversion element and the second conversion element;
• and
• one or more contact elements extending through the planarization layer and extending through a portion of the dielectric mirror;
• wherein the method comprises:
• providing the semiconductor body;
• producing the mask having the openings at the top side of the semiconductor body;
• epitaxially producing the first conversion element and the second conversion element at the top side of the semiconductor body in the openings of the mask.