A semiconductor light-emitting device, comprising:
- a substrate;
- an epitaxial layer structure, disposed on the substrate and comprising a first-type area and a second-type area;
- a first current blocking layer, disposed on the epitaxial layer structure and located in the first-type area;
- a second current blocking layer, disposed on the epitaxial layer structure and located in the second-type area;
- a current spreading layer, disposed on the epitaxial layer structure and located in the first-type area, wherein the current spreading layer covers the first current blocking layer and thereby the first current blocking layer is located between the current spreading layer and the epitaxial layer structure;
- a first electrode, disposed on a side of the current spreading layer facing away from the epitaxial layer structure, and being in electrically contact with the current spreading layer;
- a second electrode, disposed on the epitaxial layer structure and located in the second-type area, wherein the second current blocking layer is located between the second electrode and the epitaxial layer structure;
- wherein the first electrode comprises a first main portion and a first elongated extension portion laterally extending from the first main portion, the first current blocking layer comprises a first main blocking portion corresponding to the first main portion and a first extended blocking portion corresponding to the first elongated extension portion, the second electrode comprises a second main portion and a second elongated extension portion laterally extending from the second main portion, the second current blocking layer comprises a second main blocking portion corresponding to the second main portion and a second extended blocking portion corresponding to the second elongated extension portion, and the second extended blocking portion comprises a plurality of spacings spaced from each other;
- wherein a side of the first extended blocking portion near the second electrode is formed with a plurality of first convex structures, and the plurality of first convex structures are aligned with the plurality of spacings;
- wherein the first electrode further comprises a third elongated extension portion laterally extending from the first main portion, the third elongated extension portion and the first elongated extension portion are located two opposite sides of the first main portion, and the second elongated extension portion is located between the first elongated extension portion and the third elongated extension portion;
- and
- wherein the first current blocking layer further comprises a third extended blocking portion corresponding to the third elongated extension portion, a side of the third extended blocking portion near the second electrode is formed with a plurality of second convex structures, and the plurality of second convex structures are aligned with the plurality of spacings.