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US 11,600,743 B2Granted
High efficient microdevices
AssigneeVueReal Inc.
InventorsGholamreza Chaji, Hossein Zamani Siboni, Ehsanollah Fathi
Life of this patent
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Abstract
A microdevice structure comprising at least part of an edge of a microdevice is covered with a metal-insulator-semiconductor (MIS) structure, wherein the MIS structure comprises a MIS dielectric layer and a MIS gate conductive layer, at least one gate pad provided to the MIS gate conductive layer, and at least one micro device contact extended upwardly on a top surface of the micro device.
Claims16
A microdevice structure comprising:
- at least part of an edge of a microdevice is covered with a metal-insulator-semiconductor (MIS) structure, wherein the MIS structure comprises a MIS dielectric layer and a MIS gate conductive layer;
- at least one gate pad provided to the MIS gate conductive layer is extended upwardly;
- at least one microdevice contact extended upwardly on a top surface of the microdevice;
- and
- the at least one gate pad and the at least one microdevice contact being on a same horizontal surface on a mesa structure and separated by a distance and a first dielectric layer.
2 more elements
A method of fabricating a microdevice structure comprising:
- providing a metal-insulator-semiconductor (MIS) structure at least part of an edge of a microdevice, wherein the MIS structure comprises a MIS dielectric layer and a MIS gate conductive layer;
- providing at least one gate pad to the MIS gate conductive layer is extended upwardly;
- providing at least one microdevice contact extended upwardly on a top surface of the microdevice;
- and
- separating the at least one gate pad and the at least one microdevice contact on a horizontal surface on a mesa structure by a distance and at least a first dielectric layer.
2 more elements
Dependencies are inferred from the claim text.